PART |
Description |
Maker |
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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GSI Technology
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CY7C0832AV CY7C0830AV CY7C0831AV CY7C0837AV CY7C08 |
FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM(FLEx18 3.3V 64K/128K x 3628K/256K x 18同步双端口RAM) FLEx18 3.3 64K/128K × 3628K/256K × 18同步双口RAMFLEx18 3.3 64K/128K × 3628K/256K × 18同步双端口RAM)的
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Cypress Semiconductor Corp.
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc. IDT
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AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16)单2.7伏电池电压⑩闪存 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
256KX18 128KX36 IS61NVP25618A IS61NLP12832B-200B2 |
128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM 128K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K X 36 ZBT SRAM, 2.6 ns, PQFP100 TQFP-100 128K X 36 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PBGA119 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PQFP100
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. Integrated Silicon Solu...
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IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
|
Integrated Device Technology, Inc.
|
IS61NVP12836A IS61NVP12836A-200B2 IS61NVP12836A-20 |
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
CY7C0852V |
3.3V 64K/128K X 36 And 128K/256K X 18 Synchronous Dual-port RAM
|
CYPRESS
|
IS61NF25618-10BI IS61NF25618-8.5TQ IS61NF25618-8.5 |
128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
IS61LF12832A IS61LF12832A-6.5B2 IS61LF12832A-6.5B3 |
128K X 32, 128K X 36, 256K X 18 4 MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
GS840H18AB-100 GS840H36AB-100I GS840H32AB-180 GS84 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 12 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
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